FCA20N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

690 mJ

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Drain to Source Breakdown Voltage :

600V

Turn On Delay Time :

62 ns

Turn-Off Delay Time :

230 ns

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

60A

Base Part Number :

FCA20N60

Rise Time :

140ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

SuperFET™

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

208W Tc

Weight :

6.401g

Fall Time (Typ) :

65 ns

Rds On (Max) @ Id, Vgs :

190m Ω @ 10A, 10V

Power Dissipation :

208W

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Width :

5mm

Factory Lead Time :

12 Weeks

Vgs (Max) :

±30V

Package / Case :

TO-3P-3, SC-65-3

Length :

16.2mm

Gate to Source Voltage (Vgs) :

30V

Published :

2013

FET Type :

N-Channel

Element Configuration :

Single

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Continuous Drain Current (ID) :

20A

Qualification Status :

Not Qualified

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Number of Pins :

3

Vgs(th) (Max) @ Id :

5V @ 250μA

Height :

20.1mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Through Hole

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

3080pF @ 25V

Number of Elements :

1

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

98nC @ 10V