FCA16N60

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Mfr.Part #
FCA16N60
Manufacturer
onsemi
Package / Case
Datasheet
Download
Description
MOSFET N-CH 600V 16A TO3PN
Stock
37,856
In Stock :
37,856

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
ECCN Code :
EAR99
Min Operating Temperature :
-55°C
Turn On Delay Time :
15.8 ns
Operating Mode :
ENHANCEMENT MODE
Pbfree Code :
yes
Continuous Drain Current (ID) :
16A
RoHS Status :
ROHS3 Compliant
Rise Time :
15.5ns
Weight :
6.401g
Length :
15.8mm
Power Dissipation :
134.4W
Polarity/Channel Type :
N-Channel
Width :
5mm
Fall Time (Typ) :
20.2 ns
Max Power Dissipation :
134.4W
Packaging :
Tube
Number of Elements :
1
Pulsed Drain Current-Max (IDM) :
48A
Number of Terminations :
3
Factory Lead Time :
12 Weeks
Height :
20.1mm
Radiation Hardening :
No
Drain to Source Resistance :
170mOhm
Number of Pins :
3
REACH SVHC :
No SVHC
Element Configuration :
Single
Nominal Vgs :
4 V
Threshold Voltage :
4V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Max Operating Temperature :
150°C
Mount :
Through Hole
Gate to Source Voltage (Vgs) :
30V
Drain to Source Voltage (Vdss) :
600V
Rds On Max :
199 mΩ
Turn-Off Delay Time :
60.3 ns
Published :
2009
Input Capacitance :
2.17nF
Resistance :
199mOhm
Drain to Source Breakdown Voltage :
600V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Lead Free :
Lead Free
Transistor Application :
SWITCHING
JESD-609 Code :
e3
Contact Plating :
Tin
Datasheets
FCA16N60
Introducing Transistors - FETs, MOSFETs - Single onsemi FCA16N60 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Pins:3, FCA16N60 pinout, FCA16N60 datasheet PDF, FCA16N60 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FCA16N60 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FCA16N60


Tube 600V

FCA16N60N MOSFET Description


The SupreMos& MOSFET is Onsemi Semiconductor's next generation of high voltage super-Junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provide the lowest Rsp on-resistance, superior switching performance, and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, serveritelecom power, FPD TV power, ATX power, and industrial power applications. 



FCA16N60N MOSFET Features


RDS(on) = 170 mΩ (Typ.) @ VGS = 10V, ID = 8 A

Ultra Low Gate Charge (Typ. Qg = 40.2 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 176 pF)

100% Avalanche Tested

RoHS Compliant



FCA16N60N MOSFET Applications


PDP TV

Motor, Solenoid

AC-DC Power Supply

Switching Applications

High Voltage Voltage Converter


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