DXT5551P5-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector Cutoff (Max) :

50nA ICBO

Number of Elements :

1

Factory Lead Time :

15 Weeks

Collector Base Voltage (VCBO) :

180V

JESD-609 Code :

e3

ECCN Code :

EAR99

Continuous Collector Current :

600mA

Terminal Finish :

Matte Tin (Sn)

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-F3

Pin Count :

4

Radiation Hardening :

No

Max Breakdown Voltage :

160V

Collector Emitter Breakdown Voltage :

160V

Collector Emitter Saturation Voltage :

200mV

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Gain Bandwidth Product :

130MHz

RoHS Status :

ROHS3 Compliant

Terminal Form :

Flat

Lead Free :

Lead Free

Power Dissipation :

2.25W

Terminal Position :

Dual

Manufacturer Package Identifier :

POWERDI-5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

High Reliability

Package / Case :

PowerDI™ 5

Number of Pins :

5

Case Connection :

COLLECTOR

Frequency :

130MHz

Mount :

Surface Mount

Published :

2016

Collector Emitter Voltage (VCEO) :

160V

Transition Frequency :

130MHz

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Max Power Dissipation :

2.25W

Max Collector Current :

600mA

REACH SVHC :

No SVHC

Transistor Application :

AMPLIFIER

Emitter Base Voltage (VEBO) :

6V

Element Configuration :

Single

Base Part Number :

DXT5551

Peak Reflow Temperature (Cel) :

260

Polarity/Channel Type :

NPN

Weight :

95.991485mg

Time@Peak Reflow Temperature-Max (s) :

40

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Transistor Type :

NPN

Mounting Type :

Surface Mount