DXT5551P5-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Radiation Hardening :

No

Transition Frequency :

130MHz

Terminal Finish :

Matte Tin (Sn)

Emitter Base Voltage (VEBO) :

6V

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

JESD-30 Code :

R-PDSO-F3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Base Part Number :

DXT5551

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Package / Case :

PowerDI™ 5

Collector Base Voltage (VCBO) :

180V

Case Connection :

COLLECTOR

Current - Collector Cutoff (Max) :

50nA ICBO

Transistor Application :

AMPLIFIER

Gain Bandwidth Product :

130MHz

Max Breakdown Voltage :

160V

Number of Elements :

1

Published :

2016

Mount :

Surface Mount

Additional Feature :

High Reliability

Terminal Form :

Flat

Pin Count :

4

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Power Dissipation :

2.25W

Terminal Position :

Dual

Continuous Collector Current :

600mA

JESD-609 Code :

e3

Lead Free :

Lead Free

Number of Terminations :

3

Max Collector Current :

600mA

Number of Pins :

5

Mounting Type :

Surface Mount

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Breakdown Voltage :

160V

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

15 Weeks

Transistor Type :

NPN

Weight :

95.991485mg

ECCN Code :

EAR99

Collector Emitter Saturation Voltage :

200mV

Max Power Dissipation :

2.25W

Element Configuration :

Single

Polarity/Channel Type :

NPN

Manufacturer Package Identifier :

POWERDI-5

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

160V

Frequency :

130MHz

Peak Reflow Temperature (Cel) :

260