DXT5551-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Height :

1.6mm

Published :

2007

Weight :

51.993025mg

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Pin Count :

4

Number of Elements :

1

JESD-30 Code :

R-PSSO-F3

Factory Lead Time :

19 Weeks

Collector Emitter Breakdown Voltage :

160V

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Power Dissipation :

1W

Operating Temperature :

-55°C~150°C TJ

Base Part Number :

DXT5551

Current - Collector Cutoff (Max) :

50nA ICBO

Number of Pins :

4

Package / Case :

TO-243AA

Case Connection :

COLLECTOR

Mount :

Surface Mount

Collector Base Voltage (VCBO) :

180V

JESD-609 Code :

e3

Terminal Form :

Flat

Transistor Type :

NPN

Mounting Type :

Surface Mount

Width :

2.6mm

Max Breakdown Voltage :

160V

REACH SVHC :

No SVHC

Emitter Base Voltage (VEBO) :

6V

Peak Reflow Temperature (Cel) :

260

Collector Emitter Saturation Voltage :

200mV

Max Power Dissipation :

1W

Number of Terminations :

3

Terminal Finish :

Matte Tin (Sn)

Length :

4.6mm

Polarity/Channel Type :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

160V

Element Configuration :

Single

ECCN Code :

EAR99

Transition Frequency :

100MHz

Time@Peak Reflow Temperature-Max (s) :

40

Max Collector Current :

600mA

Frequency :

300MHz

Pbfree Code :

yes

Transistor Application :

SWITCHING

Gain Bandwidth Product :

300MHz

Radiation Hardening :

No