DN2625K4-G

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Mfr.Part #
DN2625K4-G
Manufacturer
Microchip Technology
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 250V 1.1A TO252
Stock
2,218
In Stock :
2,218

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Pins :
3
JESD-30 Code :
R-PSSO-G2
Case Connection :
DRAIN
Reach Compliance Code :
Compliant
Transistor Type :
1 N-Channel
Package Shape :
RECTANGULAR
Configuration :
Single
Turn-Off Delay Time :
10 ns
Turn On Delay Time :
10 ns
Weight :
3.949996g
Product Status :
Active
Pin Count :
3
FET Feature :
Depletion Mode
Polarity/Channel Type :
N-Channel
Number of Terminals :
2
Number of Channels :
1
Transistor Element Material :
SILICON
Element Configuration :
Single
Product Category :
MOSFET
Width :
6.1mm
Gate Charge (Qg) (Max) @ Vgs :
7.04nC @ 1.5V
Power Dissipation (Max) :
--
Current - Continuous Drain (Id) @ 25°C :
1.1A Tj
FET Type :
N-Channel
Published :
2013
ECCN Code :
EAR99
Transistor Application :
SWITCHING
Continuous Drain Current (ID) :
1.1A
Drain-source On Resistance-Max :
3.5 Ω
Drive Voltage (Max Rds On,Min Rds On) :
0V
Number of Elements per Chip :
1
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Additional Feature :
LOW THRESHOLD
Length :
6.73mm
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mount :
Surface Mount
Height :
2.39mm
Number of Terminations :
2
DS Breakdown Voltage-Min :
250 V
Package Type :
DPAK (TO-252)
Rds On (Max) @ Id, Vgs :
3.5 Ω @ 1A, 0V
RoHS :
Details
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Supplier Device Package :
TO-252, (D-Pak)
Power Dissipation :
-
Brand :
Microchip Technology / Atmel
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Pulsed Drain Current-Max (IDM) :
3.3 A
Packaging :
Tape and Reel (TR)
Vgs(th) (Max) @ Id :
--
Series :
--
Qualification :
-
Factory Lead Time :
19 Weeks
Operating Mode :
Depletion Mode
Transistor Polarity :
N-Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Continuous Drain Current Id :
1.1
Mounting Type :
Surface Mount
Manufacturer :
Microchip
Input Capacitance (Ciss) (Max) @ Vds :
1000pF @ 25V
JEDEC-95 Code :
TO-252
Product Type :
MOSFET
Product :
MOSFET Small Signal
Channel Mode :
Depletion
Drain to Source Voltage (Vdss) :
250V
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
Channel Type :
Dual N
Rise Time :
20ns
Terminal Form :
Gull wing
MSL :
MSL 3 - 168 hours
Maximum Operating Temperature :
+150 °C
Surface Mount :
yes
Base Product Number :
DN2625
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Minimum Operating Temperature :
-55 °C
Operating Temperature :
-55°C~150°C TJ
Fall Time (Typ) :
20 ns
Mounting Style :
SMD/SMT
Terminal Position :
Single
Drain to Source Breakdown Voltage :
250V
Gate to Source Voltage (Vgs) :
20V
Qualification Status :
Not Qualified
Vgs (Max) :
±20V
Datasheets
DN2625K4-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology DN2625K4-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Channels:1, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Terminations:2, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, DN2625K4-G pinout, DN2625K4-G datasheet PDF, DN2625K4-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology DN2625K4-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology DN2625K4-G


N-Channel Tape & Reel (TR) 3.5 Ω @ 1A, 0V ±20V 1000pF @ 25V 7.04nC @ 1.5V 250V TO-252-3, DPak (2 Leads + Tab), SC-63

DN2625K4-G Overview


A device's maximum input capacitance is 1000pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 1.1A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=250V, and this device has a drain-to-source breakdown voltage of 250V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 10 ns.Its maximum pulsed drain current is 3.3 A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 250 V.To operate this transistor, you need to apply a 250V drain to source voltage (Vdss).This device uses no drive voltage (0V) to reduce its overall power consumption.

DN2625K4-G Features


a continuous drain current (ID) of 1.1A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 10 ns
based on its rated peak drain current 3.3 A.
a 250V drain to source voltage (Vdss)


DN2625K4-G Applications


There are a lot of Microchip Technology
DN2625K4-G applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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