DN2625K4-G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Number of Terminations :

2

Reach Compliance Code :

Compliant

Series :

--

Product Type :

MOSFET

Continuous Drain Current Id :

1.1

Pulsed Drain Current-Max (IDM) :

3.3 A

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

1.1A Tj

Operating Mode :

Depletion Mode

Product :

MOSFET Small Signal

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 25V

Pin Count :

3

Fall Time (Typ) :

20 ns

Turn On Delay Time :

10 ns

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

--

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Configuration :

Single

Number of Terminals :

2

ECCN Code :

EAR99

Published :

2013

FET Type :

N-Channel

Package Shape :

RECTANGULAR

Power Dissipation (Max) :

--

Factory Lead Time :

19 Weeks

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

250 V

Drive Voltage (Max Rds On,Min Rds On) :

0V

Number of Channels :

1

Channel Mode :

Depletion

Product Category :

MOSFET

Terminal Position :

Single

Height :

2.39mm

Continuous Drain Current (ID) :

1.1A

Transistor Application :

SWITCHING

RoHS :

Details

Transistor Polarity :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

7.04nC @ 1.5V

Supplier Device Package :

TO-252, (D-Pak)

JEDEC-95 Code :

TO-252

Base Product Number :

DN2625

Rds On (Max) @ Id, Vgs :

3.5 Ω @ 1A, 0V

Brand :

Microchip Technology / Atmel

Surface Mount :

yes

Package Type :

DPAK (TO-252)

Power Dissipation :

-

Packaging :

Tape and Reel (TR)

Maximum Operating Temperature :

+150 °C

Product Status :

Active

Terminal Form :

Gull wing

Qualification :

-

Weight :

3.949996g

Rise Time :

20ns

Drain to Source Voltage (Vdss) :

250V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Qualification Status :

Not Qualified

Element Configuration :

Single

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Manufacturer :

Microchip

Mounting Style :

SMD/SMT

Width :

6.1mm

Turn-Off Delay Time :

10 ns

Number of Pins :

3

JESD-30 Code :

R-PSSO-G2

Drain-source On Resistance-Max :

3.5 Ω

Length :

6.73mm

Transistor Type :

1 N-Channel

MSL :

MSL 3 - 168 hours

FET Feature :

Depletion Mode

Vgs (Max) :

±20V

Additional Feature :

LOW THRESHOLD

Number of Elements per Chip :

1

Channel Type :

Dual N

Drain to Source Breakdown Voltage :

250V

Minimum Operating Temperature :

-55 °C