DN1509N8-G
- Mfr.Part #
- DN1509N8-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- MOSFET N-CH 90V 360MA TO243AA
- Stock
- 2,620
- In Stock :
- 2,620
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package Shape :
- RECTANGULAR
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Position :
- Single
- Power Dissipation (Max) :
- 1.6W (Ta)
- Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 16ns
- Vgs (Max) :
- ±20V
- Number of Pins :
- 3
- Supplier Device Package :
- TO-243AA (SOT-89)
- Terminal Form :
- Flat
- Number of Elements :
- 1
- Series :
- --
- Case Connection :
- DRAIN
- Surface Mount :
- yes
- Mount :
- Surface Mount
- Number of Terminations :
- 3
- Width :
- 2.6mm
- REACH SVHC :
- No SVHC
- Drive Voltage (Max Rds On,Min Rds On) :
- 0V
- Element Configuration :
- Single
- RoHS :
- Details
- Mounting Style :
- SMD/SMT
- Polarity/Channel Type :
- N-Channel
- Reach Compliance Code :
- Compliant
- Power Dissipation-Max :
- 1.6W Ta
- Peak Reflow Temperature (Cel) :
- 260
- FET Feature :
- Depletion Mode
- Transistor Polarity :
- N-Channel
- DS Breakdown Voltage-Min :
- 90 V
- Rds On (Max) @ Id, Vgs :
- 6 Ω @ 200mA, 0V
- JESD-609 Code :
- e3
- Product Category :
- MOSFET
- Mounting Type :
- Surface Mount
- Published :
- 2005
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Channel Type :
- N
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Factory Lead Time :
- 6 Weeks
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Length :
- 4.6mm
- Power Dissipation-Max (Abs) :
- 1.6 W
- Transistor Element Material :
- SILICON
- Feedback Cap-Max (Crss) :
- 15 pF
- ECCN Code :
- EAR99
- Terminal Finish :
- Matte Tin (Sn)
- Current - Continuous Drain (Id) @ 25°C :
- 360mA Tj
- JESD-30 Code :
- R-PSSO-F3
- Package / Case :
- TO-243AA
- Number of Channels :
- 1
- Continuous Drain Current (ID) :
- 360mA
- Product :
- MOSFET Small Signal
- Lead Free :
- Lead Free
- Minimum Operating Temperature :
- - 55 C
- Number of Terminals :
- 3
- Channel Mode :
- Depletion
- Manufacturer :
- Microchip
- HTS Code :
- 8541.90.00.00
- Input Capacitance (Ciss) (Max) @ Vds :
- 150pF @ 25V
- Drain-source On Resistance-Max :
- 6Ohm
- Continuous Drain Current Id :
- 360
- Drain to Source Voltage (Vdss) :
- 90V
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Transistor Type :
- 1 N-Channel
- Base Product Number :
- DN1509N8
- Drain to Source Breakdown Voltage :
- 90V
- Product Status :
- Active
- Maximum Operating Temperature :
- + 150 C
- Power Dissipation :
- 1.6W
- Weight :
- 52.786812mg
- Qualification Status :
- Not Qualified
- FET Type :
- N-Channel
- JEDEC-95 Code :
- TO-243AA
- Turn On Delay Time :
- 12 ns
- Vgs(th) (Max) @ Id :
- --
- Product Type :
- MOSFET
- Brand :
- Microchip Technology / Atmel
- Turn-Off Delay Time :
- 15 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 1.6mm
- Fall Time (Typ) :
- 16 ns
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Datasheets
- DN1509N8-G

N-Channel Tape & Reel (TR) 6 Ω @ 200mA, 0V ±20V 150pF @ 25V 90V TO-243AA
DN1509N8-G Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 150pF @ 25V.This device conducts a continuous drain current (ID) of 360mA, which is the maximum continuous current transistor can conduct.Using VGS=90V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 90V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 15 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 12 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 90 V.This transistor requires a drain-source voltage (Vdss) of 90V.In order to reduce power consumption, this device uses a drive voltage of 0V volts (0V).
DN1509N8-G Features
a continuous drain current (ID) of 360mA
a drain-to-source breakdown voltage of 90V voltage
the turn-off delay time is 15 ns
a 90V drain to source voltage (Vdss)
DN1509N8-G Applications
There are a lot of Microchip Technology
DN1509N8-G applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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| DN1509K1-G | Microchip Technology | 2,845 | MOSFET N-CH 90V 200MA SOT23-5 |
















