DMT8012LFG-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

80V

Vgs(th) (Max) @ Id :

3V @ 250µA

Capacitance :

1.949nF

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Matte Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

9.5A Ta 35A Tc

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Weight :

72.007789mg

Continuous Drain Current (ID) :

35A

Package / Case :

8-PowerVDFN

Factory Lead Time :

23 Weeks

Rds On (Max) @ Id, Vgs :

16m Ω @ 12A, 10V

Rise Time :

3.8ns

Input Capacitance (Ciss) (Max) @ Vds :

1949pF @ 40V

Mount :

Surface Mount

Number of Pins :

8

FET Type :

N-Channel

Fall Time (Typ) :

3.5 ns

Published :

2014

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Element Configuration :

Single

Power Dissipation-Max :

2.2W Ta 30W Tc

JESD-609 Code :

e3

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Turn-Off Delay Time :

16.5 ns

Turn On Delay Time :

4.9 ns

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V