DMT4005SCT

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

4.7m Ω @ 50A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

Published :

2016

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

40V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

100A

Additional Feature :

High Reliability

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSFM-T3

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

3062pF @ 20V

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-220-3

Factory Lead Time :

24 Weeks

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

160A

Power Dissipation-Max :

2.3W Ta 104W Tc

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Number of Terminations :

3

Mount :

Through Hole

Series :

Automotive, AEC-Q101

Gate Charge (Qg) (Max) @ Vgs :

49.1nC @ 10V

Avalanche Energy Rating (Eas) :

52.8 mJ

Drain to Source Voltage (Vdss) :

40V

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.0047Ohm