DMT4005SCT

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

40V

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

52.8 mJ

Continuous Drain Current (ID) :

100A

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

40V

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

160A

Drain-source On Resistance-Max :

0.0047Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

49.1nC @ 10V

Package / Case :

TO-220-3

Series :

Automotive, AEC-Q101

Additional Feature :

High Reliability

Power Dissipation-Max :

2.3W Ta 104W Tc

Published :

2016

FET Type :

N-Channel

Mounting Type :

Through Hole

Factory Lead Time :

24 Weeks

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

3062pF @ 20V

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

not_compliant

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Rds On (Max) @ Id, Vgs :

4.7m Ω @ 50A, 10V

JESD-30 Code :

R-PSFM-T3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V