DMS2085LSD-13
- Mfr.Part #
- DMS2085LSD-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 3.3A 8SO
- Stock
- 35,710
- In Stock :
- 35,710
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Breakdown Voltage :
- 20V
- Terminal Finish :
- Matte Tin (Sn)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Turn-Off Delay Time :
- 14 ns
- Number of Channels :
- 1
- Continuous Drain Current (ID) :
- 3.3A
- Number of Pins :
- 8
- Rise Time :
- 3ns
- Power Dissipation-Max :
- 1.1W Ta
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs (Max) :
- ±20V
- Element Configuration :
- Single
- FET Feature :
- Schottky Diode (Isolated)
- Turn On Delay Time :
- 3.3 ns
- Published :
- 2014
- JESD-609 Code :
- e3
- Current - Continuous Drain (Id) @ 25°C :
- 3.3A Ta
- Fall Time (Typ) :
- 6.8 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 353pF @ 15V
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 85m Ω @ 3.05A, 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 7.8nC @ 10V
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 73.992255mg
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Datasheets
- DMS2085LSD-13

P-Channel Tape & Reel (TR) 85m Ω @ 3.05A, 10V ±20V 353pF @ 15V 7.8nC @ 10V 8-SOIC (0.154, 3.90mm Width)
DMS2085LSD-13 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 353pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 3.3A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 20V, and this device has a drainage-to-source breakdown voltage of 20VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 14 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 3.3 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
DMS2085LSD-13 Features
a continuous drain current (ID) of 3.3A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 14 ns
DMS2085LSD-13 Applications
There are a lot of Diodes Incorporated
DMS2085LSD-13 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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