DMP4065S-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

30

Drain-source On Resistance-Max :

0.08Ohm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

12.2nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

587pF @ 20V

Factory Lead Time :

23 Weeks

Rds On (Max) @ Id, Vgs :

80m Ω @ 4.2A, 10V

Drain to Source Voltage (Vdss) :

40V

Vgs (Max) :

±20V

Package / Case :

TO-236-3, SC-59, SOT-23-3

JESD-609 Code :

e3

Number of Elements :

1

Power Dissipation-Max :

720mW Ta

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

3V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

2.4A Ta

Mount :

Surface Mount

FET Type :

P-Channel

Number of Terminations :

3

JESD-30 Code :

R-PDSO-G3

HTS Code :

8541.21.00.95

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Terminal Position :

Dual

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

2.4A

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

40V

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

1999

Terminal Finish :

Matte Tin (Sn) - annealed