DMP3085LSS-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

70m Ω @ 5.3A, 10V

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Vgs (Max) :

±20V

Reference Standard :

AEC-Q101

Width :

3.95mm

Drain to Source Voltage (Vdss) :

30V

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Additional Feature :

High Reliability

Time@Peak Reflow Temperature-Max (s) :

30

FET Type :

P-Channel

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

3.8A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn On Delay Time :

4.8 ns

Drain-source On Resistance-Max :

0.07Ohm

Number of Elements :

1

DS Breakdown Voltage-Min :

30V

Terminal Finish :

Matte Tin (Sn)

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Published :

2013

Number of Terminations :

8

Number of Pins :

8

Terminal Form :

Gull wing

Power Dissipation-Max :

1.3W Ta

Length :

4.95mm

Rise Time :

5ns

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

3V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

3.8A Ta

Factory Lead Time :

23 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

563pF @ 25V

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

REACH SVHC :

No SVHC

Fall Time (Typ) :

14.6 ns

Height :

1.5mm

Terminal Position :

Dual

Turn-Off Delay Time :

31 ns

Gate Charge (Qg) (Max) @ Vgs :

5.2nC @ 4.5V