DMN3900UFA-7B

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

0.7nC @ 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

10.5 ns

Published :

2013

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Gate to Source Voltage (Vgs) :

8V

Rds On (Max) @ Id, Vgs :

760m Ω @ 200mA, 4.5V

Number of Channels :

1

Continuous Drain Current (ID) :

650mA

Current - Continuous Drain (Id) @ 25°C :

550mA Ta

Factory Lead Time :

15 Weeks

Number of Elements :

1

Number of Terminations :

3

Vgs(th) (Max) @ Id :

950mV @ 250μA

Transistor Application :

SWITCHING

Packaging :

Digi-Reel®

Mounting Type :

Surface Mount

Case Connection :

DRAIN

REACH SVHC :

No SVHC

Fall Time (Typ) :

23.4 ns

Terminal Position :

BOTTOM

Lead Free :

Lead Free

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

30V

Element Configuration :

Single

Turn-Off Delay Time :

80.6 ns

Time@Peak Reflow Temperature-Max (s) :

30

FET Type :

N-Channel

Package / Case :

3-XFDFN

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Vgs (Max) :

±8V

Mount :

Surface Mount

Rise Time :

7.8ns

JESD-609 Code :

e4

Power Dissipation-Max :

390mW Ta

Drain Current-Max (Abs) (ID) :

0.65A

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

42.2pF @ 25V