DMN313DLT-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

2Ohm

Number of Pins :

3

Terminal Finish :

Matte Tin (Sn)

Height :

800μm

Pin Count :

3

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Gate to Source Voltage (Vgs) :

20V

Length :

1.7mm

Package / Case :

SOT-523

Current - Continuous Drain (Id) @ 25°C :

270mA Ta

Gate Charge (Qg) (Max) @ Vgs :

0.5nC @ 4.5V

Additional Feature :

High Reliability

Rise Time :

2.24ns

Turn On Delay Time :

4.5 ns

Number of Terminations :

3

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Turn-Off Delay Time :

19.2 ns

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

0.21A

Mount :

Surface Mount

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

36.3pF @ 5V

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Published :

2011

Continuous Drain Current (ID) :

380mA

Transistor Application :

SWITCHING

Width :

850μm

Factory Lead Time :

14 Weeks

JESD-609 Code :

e3

Terminal Position :

Dual

Fall Time (Typ) :

28.2 ns

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

30V

Pbfree Code :

yes

Mounting Type :

Surface Mount

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Time@Peak Reflow Temperature-Max (s) :

40

Rds On (Max) @ Id, Vgs :

2 Ω @ 10mA, 4V

Terminal Form :

Gull wing

Power Dissipation-Max :

280mW Ta

Transistor Element Material :

SILICON