DMN3030LSS-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

9A

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2012

Rise Time :

4.5ns

Width :

3.95mm

Length :

4.95mm

Pin Count :

8

Terminal Form :

Gull wing

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Rds On (Max) @ Id, Vgs :

18m Ω @ 9A, 10V

Gate to Source Voltage (Vgs) :

25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

30V

Number of Elements :

1

Additional Feature :

High Reliability

Current - Continuous Drain (Id) @ 25°C :

9A Ta

Pulsed Drain Current-Max (IDM) :

40A

Power Dissipation-Max :

2.5W Ta

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2.1V @ 250μA

FET Type :

N-Channel

Number of Pins :

8

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±25V

ECCN Code :

EAR99

Height :

1.5mm

Drain Current-Max (Abs) (ID) :

9A

RoHS Status :

ROHS3 Compliant

Number of Channels :

1

Turn On Delay Time :

3.2 ns

REACH SVHC :

No SVHC

Factory Lead Time :

7 Weeks

Turn-Off Delay Time :

18 ns

Number of Terminations :

8

Input Capacitance (Ciss) (Max) @ Vds :

741pF @ 15V

Fall Time (Typ) :

14 ns

Transistor Element Material :

SILICON

Weight :

850.995985mg

Terminal Finish :

Matte Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Radiation Hardening :

No

Transistor Application :

SWITCHING