DMN3029LFG-7

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Mfr.Part #
DMN3029LFG-7
Manufacturer
Diodes Incorporated
Package / Case
8-PowerVDFN
Datasheet
Download
Description
MOSFET N-CH 30V 5.3A PWRDI333-8
Stock
16,716
In Stock :
16,716

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs(th) (Max) @ Id :
1.8V @ 250μA
Time@Peak Reflow Temperature-Max (s) :
40
Mounting Type :
Surface Mount
REACH SVHC :
No SVHC
DS Breakdown Voltage-Min :
30V
Mount :
Surface Mount
Drain to Source Voltage (Vdss) :
30V
Factory Lead Time :
15 Weeks
JESD-30 Code :
S-PDSO-N5
Case Connection :
DRAIN
Drain Current-Max (Abs) (ID) :
8A
Input Capacitance (Ciss) (Max) @ Vds :
580pF @ 15V
Terminal Finish :
Matte Tin (Sn)
Number of Pins :
8
Gate Charge (Qg) (Max) @ Vgs :
11.3nC @ 10V
Reach Compliance Code :
not_compliant
Packaging :
Cut Tape (CT)
Peak Reflow Temperature (Cel) :
260
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Mode :
ENHANCEMENT MODE
Pbfree Code :
No
Continuous Drain Current (ID) :
5.3A
ECCN Code :
EAR99
Package / Case :
8-PowerVDFN
Vgs (Max) :
±25V
Operating Temperature :
-55°C~150°C TJ
JESD-609 Code :
e3
Rds On (Max) @ Id, Vgs :
18.6m Ω @ 10A, 10V
Number of Terminations :
5
Terminal Position :
Dual
Terminal Form :
NO LEAD
Number of Elements :
1
Transistor Application :
SWITCHING
Transistor Element Material :
SILICON
Configuration :
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max :
1W Ta
RoHS Status :
ROHS3 Compliant
Published :
2012
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
FET Type :
N-Channel
Additional Feature :
High Reliability
Pin Count :
8
Current - Continuous Drain (Id) @ 25°C :
5.3A Ta
Datasheets
DMN3029LFG-7
Introducing Transistors - FETs, MOSFETs - Single Diodes Incorporated DMN3029LFG-7 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:8, Package / Case:8-PowerVDFN, Operating Temperature:-55°C~150°C TJ, Number of Terminations:5, DMN3029LFG-7 pinout, DMN3029LFG-7 datasheet PDF, DMN3029LFG-7 amp .Beyond Transistors - FETs, MOSFETs - Single Diodes Incorporated DMN3029LFG-7 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated DMN3029LFG-7


N-Channel Cut Tape (CT) 18.6m Ω @ 10A, 10V ±25V 580pF @ 15V 11.3nC @ 10V 30V 8-PowerVDFN

DMN3029LFG-7 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 580pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 8A.In order for DS breakdown voltage to remain above 30V, it should remain above the 30V level.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

DMN3029LFG-7 Features


a continuous drain current (ID) of 5.3A
a 30V drain to source voltage (Vdss)


DMN3029LFG-7 Applications


There are a lot of Diodes Incorporated
DMN3029LFG-7 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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