DMN3024LK3-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Drain Current-Max (Abs) (ID) :

9.78A

Number of Terminations :

2

ECCN Code :

EAR99

Turn On Delay Time :

2.9 ns

Gate Charge (Qg) (Max) @ Vgs :

12.9nC @ 10V

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

9.78A Ta

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Number of Channels :

1

Pulsed Drain Current-Max (IDM) :

46.5A

Vgs (Max) :

±20V

Weight :

3.949996g

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

6.22mm

JESD-30 Code :

R-PSSO-G2

Factory Lead Time :

17 Weeks

Turn-Off Delay Time :

16 ns

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn)

Packaging :

Cut Tape (CT)

JEDEC-95 Code :

TO-252AA

Input Capacitance (Ciss) (Max) @ Vds :

608pF @ 15V

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

30V

REACH SVHC :

No SVHC

Pbfree Code :

No

Fall Time (Typ) :

8 ns

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection :

DRAIN

Element Configuration :

Single

Length :

6.73mm

Rds On (Max) @ Id, Vgs :

24m Ω @ 7A, 10V

Vgs(th) (Max) @ Id :

3V @ 250µA

Height :

2.39mm

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

40

Rise Time :

3.3ns

JESD-609 Code :

e3

Number of Elements :

1

Drain-source On Resistance-Max :

0.024Ohm

Transistor Application :

SWITCHING

Power Dissipation :

8.9W

Continuous Drain Current (ID) :

14.4A

Power Dissipation-Max :

2.17W Ta

Radiation Hardening :

No