DMN3020LK3-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

2.17W Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

8 ns

Number of Terminations :

2

Terminal Finish :

Matte Tin (Sn)

Turn-Off Delay Time :

16 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2012

Time@Peak Reflow Temperature-Max (s) :

40

Rds On (Max) @ Id, Vgs :

20m Ω @ 7A, 10V

Drain to Source Breakdown Voltage :

30V

Gate Charge (Qg) (Max) @ Vgs :

6.3nC @ 4.5V

Number of Channels :

1

Case Connection :

DRAIN

Mount :

Surface Mount

Vgs (Max) :

±20V

Rise Time :

3.3ns

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Turn On Delay Time :

2.9 ns

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.02Ohm

Terminal Position :

Single

Gate to Source Voltage (Vgs) :

12V

Packaging :

Cut Tape (CT)

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Number of Elements :

1

JEDEC-95 Code :

TO-252AA

FET Type :

N-Channel

ECCN Code :

EAR99

JESD-609 Code :

e3

Continuous Drain Current (ID) :

11.3A

Pin Count :

4

Current - Continuous Drain (Id) @ 25°C :

11.3A Ta

JESD-30 Code :

R-PSSO-G2

Weight :

3.949996g

Pbfree Code :

No

Input Capacitance (Ciss) (Max) @ Vds :

608pF @ 15V

Vgs(th) (Max) @ Id :

3V @ 250µA

Radiation Hardening :

No