DMN3016LFDF-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.012Ohm

FET Type :

N-Channel

JESD-609 Code :

e4

Terminal Form :

NO LEAD

Drain Current-Max (Abs) (ID) :

10A

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

12A Ta

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

30V

Drain to Source Voltage (Vdss) :

30V

Terminal Position :

Dual

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Reference Standard :

AEC-Q101

Case Connection :

DRAIN

Power Dissipation-Max :

2.02W Ta

Vgs(th) (Max) @ Id :

2V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

25.1nC @ 10V

Vgs (Max) :

±20V

Package / Case :

6-UDFN Exposed Pad

Surface Mount :

yes

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Input Capacitance (Ciss) (Max) @ Vds :

1415pF @ 15V

Number of Terminations :

6

Rds On (Max) @ Id, Vgs :

12m Ω @ 11A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

22 Weeks

Additional Feature :

High Reliability

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

S-PDSO-N6