DMG7702SFG-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

30V

Element Configuration :

Single

Terminal Finish :

Matte Tin (Sn)

Package / Case :

8-PowerVDFN

Peak Reflow Temperature (Cel) :

260

REACH SVHC :

No SVHC

Turn On Delay Time :

15.8 ns

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

9.5A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

30V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Additional Feature :

High Reliability

Transistor Application :

SWITCHING

Fall Time (Typ) :

13.6 ns

Gate Charge (Qg) (Max) @ Vgs :

14.7nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

12A Ta

Pin Count :

8

Published :

2012

Continuous Drain Current (ID) :

12A

Mounting Type :

Surface Mount

Mount :

Surface Mount

FET Feature :

Schottky Diode (Body)

Rds On (Max) @ Id, Vgs :

10m Ω @ 13.5A, 10V

Number of Pins :

8

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Factory Lead Time :

6 Weeks

Number of Channels :

1

Terminal Position :

Dual

Weight :

72.007789mg

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

S-PDSO-N5

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON

Number of Terminations :

5

Rise Time :

27.8ns

Power Dissipation-Max :

890mW Ta

Number of Elements :

1

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

4310pF @ 15V

Turn-Off Delay Time :

29.7 ns

Radiation Hardening :

No

ECCN Code :

EAR99

Vgs (Max) :

±20V

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)