DMB2227A-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

REACH SVHC :

No SVHC

Transition Frequency :

300MHz

Power Dissipation :

300mW

Collector Emitter Voltage (VCEO) :

1V

Current - Collector Cutoff (Max) :

10nA ICBO

Transistor Type :

NPN, PNP

Published :

2005

Gain Bandwidth Product :

300MHz

Width :

1.6mm

Frequency - Transition :

300MHz 200MHz

ECCN Code :

EAR99

Package / Case :

SOT-23-6

Collector Base Voltage (VCBO) :

75V

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Weight :

29.993795mg

Polarity :

NPN, PNP

Number of Pins :

6

Terminal Form :

Gull wing

Number of Terminations :

6

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA

Height :

1.1mm

Transistor Element Material :

SILICON

Length :

3mm

Emitter Base Voltage (VEBO) :

5V

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

40

Max Breakdown Voltage :

60V

Factory Lead Time :

16 Weeks

Voltage - Collector Emitter Breakdown (Max) :

40V 60V

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

Pin Count :

6

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Frequency :

300MHz

hFE Min :

35

Max Collector Current :

600mA

Element Configuration :

Dual

Mounting Type :

Surface Mount

Max Power Dissipation :

300mW

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Number of Elements :

2

Collector Emitter Breakdown Voltage :

60V

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No