DCX69-25-13
- Mfr.Part #
- DCX69-25-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 20V 1A SOT89-3
- Stock
- 7,426
- In Stock :
- 7,426
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Surface Mount
- Transition Frequency :
- 200MHz
- Polarity :
- NPN
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 500mA 1V
- Terminal Finish :
- Matte Tin (Sn)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- -55°C~150°C TJ
- JESD-30 Code :
- R-PSSO-F3
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 1A
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Terminal Form :
- Flat
- Collector Base Voltage (VCBO) :
- 25V
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 20V
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Width :
- 2.5mm
- Power - Max :
- 1W
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 3
- Base Part Number :
- DCX69
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 200MHz
- Number of Pins :
- 4
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 1W
- Collector Emitter Voltage (VCEO) :
- 20V
- RoHS Status :
- ROHS3 Compliant
- Length :
- 4.5mm
- Published :
- 2012
- Max Breakdown Voltage :
- 20V
- Weight :
- 51.993025mg
- Height :
- 1.5mm
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Case Connection :
- COLLECTOR
- Factory Lead Time :
- 19 Weeks
- ECCN Code :
- EAR99
- Package / Case :
- TO-243AA
- Datasheets
- DCX69-25-13

PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-243AA Tape & Reel (TR) Surface Mount
DCX69-25-13 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 160 @ 500mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 100mA, 1A.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 200MHz.The breakdown input voltage is 20V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
DCX69-25-13 Features
the DC current gain for this device is 160 @ 500mA 1V
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
DCX69-25-13 Applications
There are a lot of Diodes Incorporated
DCX69-25-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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