DCX68-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Max Breakdown Voltage :

20V

Number of Pins :

4

Factory Lead Time :

19 Weeks

Radiation Hardening :

No

Terminal Form :

Flat

Time@Peak Reflow Temperature-Max (s) :

40

Frequency :

300MHz

Collector Emitter Breakdown Voltage :

20V

JESD-30 Code :

R-PSSO-F3

Polarity/Channel Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

500mV @ 100mA, 1A

Number of Terminations :

3

Base Part Number :

DCX68

Packaging :

Tape and Reel (TR)

Width :

2.5mm

Element Configuration :

Single

Emitter Base Voltage (VEBO) :

5V

DC Current Gain (hFE) (Min) @ Ic, Vce :

85 @ 500mA 1V

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Pin Count :

3

Height :

1.5mm

Mounting Type :

Surface Mount

Case Connection :

COLLECTOR

Mount :

Surface Mount

Max Power Dissipation :

1W

Package / Case :

TO-243AA

Length :

4.5mm

Collector Emitter Saturation Voltage :

500mV

Weight :

51.993025mg

JESD-609 Code :

e3

Published :

2008

Collector Base Voltage (VCBO) :

25V

REACH SVHC :

No SVHC

Current - Collector Cutoff (Max) :

100nA ICBO

Terminal Finish :

Matte Tin (Sn)

Transistor Type :

NPN

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

20V

Max Collector Current :

1A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transition Frequency :

330MHz

Pbfree Code :

yes

Power Dissipation :

1W

Gain Bandwidth Product :

330MHz

Number of Elements :

1