CYD18S18V18-200BBAXC

Manufacturer :

Infineon Technologies

Product Category :

Memory

Output Characteristics :

3-STATE

Number of Functions :

1

Organization :

1MX18

RoHS Status :

ROHS3 Compliant

Access Time :

3.3ns

I/O Type :

COMMON

Lead Free :

Lead Free

Memory Type :

Volatile

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Time@Peak Reflow Temperature-Max (s) :

30

Clock Frequency :

200MHz

Factory Lead Time :

12 Weeks

Memory Interface :

Parallel

Packaging :

Tray

Number of Ports :

2

Memory Format :

SRAM

JESD-609 Code :

e1

Height Seated (Max) :

1.7mm

Supply Voltage-Max (Vsup) :

1.58V

Terminal Position :

BOTTOM

Radiation Hardening :

No

Voltage - Supply :

1.42V~1.58V 1.7V~1.9V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Standby Voltage-Min :

1.4V

Terminal Pitch :

1mm

Memory Width :

18

Nominal Supply Current :

770mA

Sync/Async :

SYNCHRONOUS

Pin Count :

256

Published :

2011

Base Part Number :

CYD18S18

Mounting Type :

Surface Mount

Additional Feature :

PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V

Word Size :

18b

Length :

17mm

Operating Temperature :

0°C~70°C TA

Memory Size :

18Mb 1M x 18

Standby Current-Max :

0.3A

Supply Voltage :

1.5V

Address Bus Width :

20b

Mount :

Surface Mount

Density :

18 Mb

Operating Supply Voltage :

1.8V

Number of Pins :

256

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

256

Package / Case :

256-LBGA