CYD18S18V18-167BBAXC

Manufacturer :

Rochester Electronics

Product Category :

Memory

Operating Temperature :

0°C ~ 70°C (TA)

Product Status :

Active

Voltage - Supply :

1.42V ~ 1.58V, 1.7V ~ 1.9V

Access Time :

4 ns

Clock Frequency :

167 MHz

Qualification Status :

Not Qualified

Surface Mount :

yes

Operating Mode :

SYNCHRONOUS

JESD-609 Code :

e1

Package / Case :

256-LBGA

ECCN Code :

3A991.B.2.A

Length :

17 mm

Subcategory :

SRAMs

Supply Current-Max :

0.69 mA

Supply Voltage-Max (Vsup) :

1.58 V

Supply Voltage-Min (Vsup) :

1.42 V

Output Characteristics :

3-STATE

Seated Height-Max :

1.7 mm

Standby Voltage-Min :

1.4 V

Number of Functions :

1

Base Product Number :

CYD18S18

Memory Density :

18874368 bit

Mounting Type :

Surface Mount

Supplier Device Package :

256-FBGA (17x17)

Number of Words :

1048576 words

JESD-30 Code :

S-PBGA-B256

Pin Count :

256

Organization :

1MX18

Power Supplies :

1.5/1.8 V

Memory Width :

18

Reach Compliance Code :

Compliant

Series :

-

Number of Terminals :

256

Package :

Bulk

Memory Size :

18Mbit

Technology :

SRAM - Dual Port, Asynchronous, Standard

Terminal Form :

Ball

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Peak Reflow Temperature (Cel) :

260

I/O Type :

COMMON

Parallel/Serial :

Parallel

Width :

17 mm

Temperature Grade :

COMMERCIAL

Memory Interface :

Parallel

Number of Ports :

2

HTS Code :

8542.32.00.41

Memory Type :

Volatile

RoHS :

Compliant

Manufacturer :

Cypress Semiconductor

Memory IC Type :

DUAL-PORT SRAM

Terminal Position :

BOTTOM

Memory Format :

SRAM

Terminal Pitch :

1 mm

Package Shape :

Square

Memory Organization :

1M x 18

Additional Feature :

PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V

Standby Current-Max :

0.3 A

Write Cycle Time - Word, Page :

-