CYD09S18V18-200BBXI

Manufacturer :

Infineon Technologies

Product Category :

Memory

Memory Format :

SRAM

JESD-609 Code :

e1

Supply Voltage-Max (Vsup) :

1.58V

Memory Interface :

Parallel

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Supply Voltage-Min (Vsup) :

1.42V

Terminal Finish :

TIN SILVER COPPER

Clock Frequency :

200MHz

Memory Size :

9Mb 512K x 18

Qualification Status :

COMMERCIAL

Terminal Position :

BOTTOM

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Length :

17mm

Supply Voltage :

1.5V

Packaging :

Tray

Height Seated (Max) :

1.7mm

Voltage - Supply :

1.42V~1.58V 1.7V~1.9V

Number of Terminations :

256

Time@Peak Reflow Temperature-Max (s) :

20

Memory Density :

9437184 bit

Number of Functions :

1

Package / Case :

256-LBGA

Organization :

512KX18

Additional Feature :

PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V

JESD-30 Code :

S-PBGA-B256

Width :

17mm

Operating Temperature :

-40°C~85°C TA

Access Time :

3.3ns

Memory Type :

Volatile

Pin Count :

256

Surface Mount :

yes

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Terminal Pitch :

1mm

Memory Width :

18