CSD25501F3
- Mfr.Part #
- CSD25501F3
- Manufacturer
- Texas Instruments
- Package / Case
- 3-XFLGA
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 3.6A 3LGA
- Stock
- 559,548
- In Stock :
- 559,548
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Base Part Number :
- CSD25501
- Factory Lead Time :
- 20 Weeks
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Width :
- 600μm
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Drain-source On Resistance-Max :
- 0.125Ohm
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 500mW Ta
- Terminal Form :
- NO LEAD
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- P-Channel
- Terminal Position :
- BOTTOM
- Thickness :
- 200μm
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Vgs (Max) :
- -20V
- DS Breakdown Voltage-Min :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Length :
- 690μm
- Number of Elements :
- 1
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Series :
- FemtoFET™
- Drain to Source Voltage (Vdss) :
- 20V
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Rds On (Max) @ Id, Vgs :
- 76m Ω @ 400mA, 4.5V
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 385pF @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 3.6A Ta
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 1.05V @ 250μA
- Gate Charge (Qg) (Max) @ Vgs :
- 1.33nC @ 4.5V
- Package / Case :
- 3-XFLGA
- Number of Terminations :
- 3
- Packaging :
- Tape and Reel (TR)
- Surface Mount :
- yes
- Datasheets
- CSD25501F3

P-Channel Tape & Reel (TR) 76m Ω @ 400mA, 4.5V -20V 385pF @ 10V 1.33nC @ 4.5V 20V 3-XFLGA
CSD25501F3 Description
The –20-V, 64-mΩ, P-Channel FemtoFET? MOSFET CSD25501F3 is designed and optimized to minimize the footprint in many handheld and mobile applications. The CSD25501F3 is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. The integrated 10-k? clamp resistor (RC) allows the gate voltage (VGS) to be operated above the maximum internal gate oxide value of –6 V, depending on the duty cycle. The gate leakage (IGSS) through the diode increases as VGS is increased above –6 V.
CSD25501F3 Features
-
Low on-resistance
-
Ultra-low Qg and Qgd
-
Ultra-small footprint
-0.7 mm × 0.6 mm
-
Low profile
-0.22-mm max-height
-
Integrated ESD protection diode
-
Lead and halogen-free
-
RoHS compliant
CSD25501F3 Applications
-
Optimized for load switch applications
-
Battery applications
-
Handheld and mobile applications
-
Low-frequency applications
-
High-frequency applications
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