CSD25485F5

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Package / Case :

3-SMD, No Lead

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

20V

Vgs (Max) :

-12V

Gate Charge (Qg) (Max) @ Vgs :

3.5nC @ 4.5V

FET Type :

P-Channel

Element Configuration :

Single

Number of Elements :

1

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.07Ohm

Terminal Position :

BOTTOM

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Factory Lead Time :

8 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 8V

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

1.3V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

533pF @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

FemtoFET™

Power Dissipation-Max :

500mW Ta

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Continuous Drain Current (ID) :

3.2A

Length :

1.49mm

Mounting Type :

Surface Mount

Width :

730μm

Rds On (Max) @ Id, Vgs :

35m Ω @ 900mA, 8V

DS Breakdown Voltage-Min :

20V

Thickness :

338μm

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

3.2A Ta

Number of Terminations :

3

Base Part Number :

CSD25485

Operating Temperature :

-55°C~150°C TJ