CSD25483F4T
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- Mfr.Part #
- CSD25483F4T
- Manufacturer
- Texas Instruments
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 1.6A 3PICOSTAR
- Stock
- 62,175
- In Stock ：
- 62,175
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- DS Breakdown Voltage-Min :
- 20V
- Mount :
- Surface Mount
- Turn-Off Delay Time :
- 17.4 ns
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation-Max :
- 500mW Ta
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 1.2V @ 250µA
- RoHS Status :
- ROHS3 Compliant
- Number of Channels :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 198pF @ 10V
- Number of Elements :
- 1
- Threshold Voltage :
- -950mV
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Terminal Position :
- BOTTOM
- Transistor Element Material :
- SILICON
- Base Part Number :
- CSD25483
- Gate Charge (Qg) (Max) @ Vgs :
- 0.96nC @ 4.5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- ULTRA LOW RESISTANCE
- Element Configuration :
- Single
- Rise Time :
- 3.7ns
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- 3-XFDFN
- Number of Terminations :
- 3
- Gate to Source Voltage (Vgs) :
- -12V
- Transistor Application :
- SWITCHING
- Turn On Delay Time :
- 4.3 ns
- Series :
- FemtoFET™
- Continuous Drain Current (ID) :
- 1.6A
- Fall Time (Typ) :
- 7 ns
- Width :
- 635μm
- Terminal Form :
- NO LEAD
- Packaging :
- Tape and Reel (TR)
- Operating Mode :
- ENHANCEMENT MODE
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Drain to Source Voltage (Vdss) :
- 20V
- Height :
- 350μm
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 205m Ω @ 500mA, 8V
- Number of Pins :
- 3
- Length :
- 1.035mm
- FET Type :
- P-Channel
- Factory Lead Time :
- 6 Weeks
- REACH SVHC :
- No SVHC
- Current - Continuous Drain (Id) @ 25°C :
- 1.6A Ta
- Datasheets
- CSD25483F4T
P-Channel Tape & Reel (TR) 205m Ω @ 500mA, 8V 198pF @ 10V 0.96nC @ 4.5V 20V 3-XFDFN
CSD25483F4T Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 198pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 17.4 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 4.3 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes -12VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is -950mV.In order for DS breakdown voltage to remain above 20V, it should remain above the 20V level.The transistor must receive a 20V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (1.8V 4.5V).
CSD25483F4T Features
a continuous drain current (ID) of 1.6A
the turn-off delay time is 17.4 ns
a threshold voltage of -950mV
a 20V drain to source voltage (Vdss)
CSD25483F4T Applications
There are a lot of Texas Instruments
CSD25483F4T applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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