CSD25481F4T

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

635μm

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Gate to Source Voltage (Vgs) :

12V

Turn On Delay Time :

4.1 ns

Rds On (Max) @ Id, Vgs :

88m Ω @ 500mA, 8V

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Element Configuration :

Single

REACH SVHC :

No SVHC

Number of Elements :

1

Terminal Position :

BOTTOM

Power Dissipation :

500mW

Current - Continuous Drain (Id) @ 25°C :

2.5A Ta

Input Capacitance (Ciss) (Max) @ Vds :

189pF @ 10V

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Lead Free :

Lead Free

Fall Time (Typ) :

6.7 ns

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

Package / Case :

3-XFDFN

Length :

1.035mm

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Mount :

Surface Mount

Rise Time :

3.6ns

Factory Lead Time :

6 Weeks

Base Part Number :

CSD25481

Continuous Drain Current (ID) :

2.5A

Threshold Voltage :

-950mV

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Turn-Off Delay Time :

16.9 ns

Additional Feature :

ULTRA LOW RESISTANCE

Gate Charge (Qg) (Max) @ Vgs :

0.91nC @ 4.5V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Terminal Form :

NO LEAD

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

500mW Ta

Series :

FemtoFET™

Vgs (Max) :

-12V

Number of Channels :

1

Drain to Source Breakdown Voltage :

-20V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

20V

FET Type :

P-Channel

Height :

350μm