CSD25481F4

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

NexFET™

Drain to Source Breakdown Voltage :

-20V

Gate to Source Voltage (Vgs) :

-12V

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

88m Ω @ 500mA, 8V

Turn-Off Delay Time :

16.9 ns

Gate Charge (Qg) (Max) @ Vgs :

0.913nC @ 4.5V

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Width :

635μm

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Height :

350μm

Length :

1.035mm

Factory Lead Time :

6 Weeks

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

20V

Base Part Number :

CSD25481

Power Dissipation :

500mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Package / Case :

3-XFDFN

Power Dissipation-Max :

500mW Ta

Operating Mode :

-0.95

Terminal Form :

NO LEAD

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

189pF @ 10V

Fall Time (Typ) :

6.7 ns

FET Type :

P-Channel

Rise Time :

3.6ns

Current - Continuous Drain (Id) @ 25°C :

2.5A Ta

Terminal Position :

BOTTOM

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Continuous Drain Current (ID) :

2.5A

Mount :

Surface Mount

Turn On Delay Time :

4.1 ns

Pbfree Code :

yes