CSD25310Q2T

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

23.9m Ω @ 5A, 4.5V

Drain-source On Resistance-Max :

0.089Ohm

Base Part Number :

CSD25310

Feedback Cap-Max (Crss) :

21.7 pF

Current - Continuous Drain (Id) @ 25°C :

20A Ta

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

48A

Input Capacitance (Ciss) (Max) @ Vds :

655pF @ 10V

Pbfree Code :

yes

JESD-609 Code :

e3

FET Type :

P-Channel

Terminal Finish :

Matte Tin (Sn)

Package / Case :

6-WDFN Exposed Pad

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Series :

NexFET™

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±8V

Drain Current-Max (Abs) (ID) :

9.6A

Factory Lead Time :

6 Weeks

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Power Dissipation-Max :

2.9W Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Surface Mount :

yes

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

20V

Terminal Position :

Dual

JESD-30 Code :

S-PDSO-N6

Drain to Source Voltage (Vdss) :

20V

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Case Connection :

SOURCE

Terminal Form :

NO LEAD

Gate Charge (Qg) (Max) @ Vgs :

4.7nC @ 4.5V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

6