CSD25310Q2T

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

20A Ta

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

6

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Vgs (Max) :

±8V

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

20V

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Drain-source On Resistance-Max :

0.089Ohm

Factory Lead Time :

6 Weeks

Feedback Cap-Max (Crss) :

21.7 pF

Pulsed Drain Current-Max (IDM) :

48A

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Case Connection :

SOURCE

JESD-609 Code :

e3

ECCN Code :

EAR99

Power Dissipation-Max :

2.9W Ta

Rds On (Max) @ Id, Vgs :

23.9m Ω @ 5A, 4.5V

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Series :

NexFET™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

JESD-30 Code :

S-PDSO-N6

Terminal Form :

NO LEAD

FET Type :

P-Channel

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Matte Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

4.7nC @ 4.5V

Number of Elements :

1

Drain to Source Voltage (Vdss) :

20V

Drain Current-Max (Abs) (ID) :

9.6A

Base Part Number :

CSD25310

Package / Case :

6-WDFN Exposed Pad

Input Capacitance (Ciss) (Max) @ Vds :

655pF @ 10V