CSD25310Q2

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Terminal Position :

Dual

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Vgs (Max) :

±8V

Pulsed Drain Current-Max (IDM) :

48A

Turn-Off Delay Time :

15 ns

Transistor Element Material :

SILICON

Thickness :

750μm

Package / Case :

6-WDFN Exposed Pad

Current - Continuous Drain (Id) @ 25°C :

20A Ta

Rise Time :

15ns

Width :

2mm

Gate to Source Voltage (Vgs) :

8V

Threshold Voltage :

-850mV

Fall Time (Typ) :

5 ns

Operating Mode :

ENHANCEMENT MODE

Series :

NexFET™

Turn On Delay Time :

8 ns

JESD-609 Code :

e4

Drain to Source Voltage (Vdss) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Length :

2mm

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Pbfree Code :

yes

DS Breakdown Voltage-Min :

20V

Input Capacitance (Ciss) (Max) @ Vds :

655pF @ 10V

Gate Charge (Qg) (Max) @ Vgs :

4.7nC @ 4.5V

RoHS Status :

ROHS3 Compliant

Terminal Form :

NO LEAD

Factory Lead Time :

8 Weeks

Power Dissipation-Max :

2.9W Ta

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Contact Plating :

Tin

Mount :

Surface Mount

ECCN Code :

EAR99

FET Type :

P-Channel

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Transistor Application :

SWITCHING

Case Connection :

SOURCE

Number of Terminations :

6

Drain-source On Resistance-Max :

0.089Ohm

Continuous Drain Current (ID) :

20A

Rds On (Max) @ Id, Vgs :

23.9m Ω @ 5A, 4.5V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

2.9W

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Mounting Type :

Surface Mount

Number of Pins :

6

Base Part Number :

CSD25310

Number of Elements :

1