CSD25310Q2

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

JESD-609 Code :

e4

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Turn On Delay Time :

8 ns

Contact Plating :

Tin

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

FET Type :

P-Channel

Drain-source On Resistance-Max :

0.089Ohm

Series :

NexFET™

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

655pF @ 10V

Transistor Application :

SWITCHING

Turn-Off Delay Time :

15 ns

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

20A Ta

Pbfree Code :

yes

Terminal Position :

Dual

Pulsed Drain Current-Max (IDM) :

48A

Power Dissipation :

2.9W

Gate to Source Voltage (Vgs) :

8V

Package / Case :

6-WDFN Exposed Pad

Rds On (Max) @ Id, Vgs :

23.9m Ω @ 5A, 4.5V

Fall Time (Typ) :

5 ns

Gate Charge (Qg) (Max) @ Vgs :

4.7nC @ 4.5V

Base Part Number :

CSD25310

Power Dissipation-Max :

2.9W Ta

Number of Terminations :

6

Lead Free :

Lead Free

Case Connection :

SOURCE

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Mount :

Surface Mount

Continuous Drain Current (ID) :

20A

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

20V

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Number of Elements :

1

Number of Pins :

6

Width :

2mm

Terminal Form :

NO LEAD

Vgs (Max) :

±8V

Drain to Source Voltage (Vdss) :

20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

15ns

Length :

2mm

Thickness :

750μm

Threshold Voltage :

-850mV

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Factory Lead Time :

8 Weeks