CSD25303W1015

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Turn-Off Delay Time :

11.3 ns

Input Capacitance (Ciss) (Max) @ Vds :

435pF @ 10V

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

1V @ 250μA

Drain-source On Resistance-Max :

0.092Ohm

Drain to Source Voltage (Vdss) :

20V

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Gate to Source Voltage (Vgs) :

8V

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

-20V

Base Part Number :

CSD25303

Number of Terminations :

6

Mounting Type :

Surface Mount

Radiation Hardening :

No

Power Dissipation :

1.5W

Transistor Element Material :

SILICON

Number of Elements :

1

Mount :

Surface Mount

Pin Count :

6

Packaging :

Tape and Reel (TR)

Terminal Form :

Ball

Power Dissipation-Max :

1.5W Ta

FET Type :

P-Channel

Fall Time (Typ) :

7.8 ns

Terminal Position :

BOTTOM

Number of Pins :

6

Continuous Drain Current (ID) :

3A

Turn On Delay Time :

3.9 ns

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Contains Lead

Rds On (Max) @ Id, Vgs :

58m Ω @ 1.5A, 4.5V

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

3A

Rise Time :

8.6ns

Package / Case :

6-UFBGA, DSBGA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

NexFET™

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Pbfree Code :

No

Gate Charge (Qg) (Max) @ Vgs :

4.3nC @ 4.5V

Operating Temperature :

-55°C~150°C TJ