CSD25301W1015

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.22Ohm

Gate to Source Voltage (Vgs) :

8V

Feedback Cap-Max (Crss) :

40 pF

Radiation Hardening :

No

Transistor Application :

SWITCHING

Pin Count :

6

Vgs (Max) :

±8V

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

6-UFBGA, DSBGA

Vgs(th) (Max) @ Id :

1V @ 250μA

Operating Temperature :

-55°C~150°C TJ

Nominal Vgs :

750 mV

Number of Elements :

1

Contact Plating :

Copper, Silver, Tin

Lead Free :

Contains Lead

Turn On Delay Time :

4 ns

Fall Time (Typ) :

12 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Rise Time :

2ns

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

270pF @ 10V

Gate Charge (Qg) (Max) @ Vgs :

2.5nC @ 4.5V

Operating Mode :

ENHANCEMENT MODE

Series :

NexFET™

Pbfree Code :

No

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

75m Ω @ 1A, 4.5V

JESD-609 Code :

e1

Terminal Form :

Ball

Number of Pins :

6

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

29 ns

Terminal Position :

BOTTOM

Dual Supply Voltage :

20V

Power Dissipation-Max :

1.5W Ta

Base Part Number :

CSD25301

Drain to Source Breakdown Voltage :

20V

Number of Terminations :

6

Termination :

SMD/SMT

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

2.2A

Power Dissipation :

1.5W

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

2.2A Tc

FET Type :

P-Channel