CSD25213W10

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

20V

Width :

0m

Length :

0m

Power Dissipation :

1W

Height :

625μm

Terminal Position :

BOTTOM

Max Junction Temperature (Tj) :

150°C

Gate to Source Voltage (Vgs) :

-6V

Turn-Off Delay Time :

1 μs

FET Type :

P-Channel

ECCN Code :

EAR99

Fall Time (Typ) :

970 ns

Drain to Source Breakdown Voltage :

-20V

Package / Case :

4-UFBGA, DSBGA

Mount :

Surface Mount

Thickness :

650μm

Factory Lead Time :

20 Weeks

Current - Continuous Drain (Id) @ 25°C :

1.6A Ta

Operating Mode :

-0.85

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

-1.6A

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

510 ns

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Pbfree Code :

yes

Lead Free :

Lead Free

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Pins :

4

Number of Channels :

1

Terminal Form :

Ball

Gate Charge (Qg) (Max) @ Vgs :

2.9nC @ 4.5V

Contact Plating :

Copper, Silver, Tin

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Series :

NexFET™

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

1W Ta

Base Part Number :

CSD25213

JESD-609 Code :

e1

Rise Time :

520ns

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

47m Ω @ 1A, 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

478pF @ 10V