CSD25211W1015
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- Mfr.Part #
- CSD25211W1015
- Manufacturer
- Texas Instruments
- Package / Case
- 6-UFBGA, DSBGA
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 3.2A 6DSBGA
- Stock
- 126,349
- In Stock ：
- 126,349
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Ball
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Rds On (Max) @ Id, Vgs :
- 33m Ω @ 1.5A, 4.5V
- Packaging :
- Tape and Reel (TR)
- Drain to Source Breakdown Voltage :
- -20V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Operating Mode :
- -0.8
- Contact Plating :
- Copper, Silver, Tin
- Input Capacitance (Ciss) (Max) @ Vds :
- 570pF @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- JESD-609 Code :
- e1
- Pbfree Code :
- yes
- Rise Time :
- 8.8ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 3.2A
- Power Dissipation-Max :
- 1W Ta
- Factory Lead Time :
- 12 Weeks
- Height :
- 1mm
- Fall Time (Typ) :
- 14.2 ns
- Power Dissipation :
- 1W
- Operating Temperature :
- -55°C~150°C TJ
- Series :
- NexFET™
- Thickness :
- 2mm
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 13.6 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 4.1nC @ 4.5V
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Number of Pins :
- 6
- Terminal Position :
- BOTTOM
- Drain to Source Voltage (Vdss) :
- 20V
- Element Configuration :
- Single
- Length :
- 1.5mm
- Package / Case :
- 6-UFBGA, DSBGA
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- -6V
- FET Type :
- P-Channel
- Vgs(th) (Max) @ Id :
- 1.1V @ 250μA
- Width :
- 1.8mm
- Base Part Number :
- CSD25211
- Current - Continuous Drain (Id) @ 25°C :
- 3.2A Ta
- Turn-Off Delay Time :
- 36.9 ns
- Datasheets
- CSD25211W1015
P-Channel Tape & Reel (TR) 33m Ω @ 1.5A, 4.5V 570pF @ 10V 4.1nC @ 4.5V 20V 6-UFBGA, DSBGA
CSD25211W1015 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 570pF @ 10V.This device has a continuous drain current (ID) of [3.2A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-20V, the drain-source breakdown voltage is -20V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 36.9 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 13.6 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be -6V volts.In order to operate this transistor, a voltage of 20V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (2.5V 4.5V).
CSD25211W1015 Features
a continuous drain current (ID) of 3.2A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 36.9 ns
a 20V drain to source voltage (Vdss)
CSD25211W1015 Applications
There are a lot of Texas Instruments
CSD25211W1015 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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