CSD25202W15
- Mfr.Part #
- CSD25202W15
- Manufacturer
- Texas Instruments
- Package / Case
- 9-UFBGA, DSBGA
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 4A 9DSBGA
- Stock
- 1,286
- In Stock :
- 1,286
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 9
- Rise Time :
- 12ns
- Rds On (Max) @ Id, Vgs :
- 26m Ω @ 2A, 4.5V
- Transistor Application :
- SWITCHING
- FET Type :
- P-Channel
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Pbfree Code :
- yes
- DS Breakdown Voltage-Min :
- 20V
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 500mW Ta
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-609 Code :
- e1
- Package / Case :
- 9-UFBGA, DSBGA
- Drain Current-Max (Abs) (ID) :
- 4A
- Feedback Cap-Max (Crss) :
- 27 pF
- Series :
- NexFET™
- Continuous Drain Current (ID) :
- 4A
- Length :
- 1.75mm
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 4A Ta
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Transistor Element Material :
- SILICON
- Terminal Position :
- BOTTOM
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Ball
- Mount :
- Surface Mount
- Width :
- 1.75mm
- Factory Lead Time :
- 8 Weeks
- Turn-Off Delay Time :
- 64 ns
- Turn On Delay Time :
- 15 ns
- Number of Elements :
- 1
- Height :
- 625μm
- Gate to Source Voltage (Vgs) :
- -6V
- Fall Time (Typ) :
- 28 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1010pF @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 7.5nC @ 4.5V
- Base Part Number :
- CSD25202
- Vgs(th) (Max) @ Id :
- 1.05V @ 250μA
- Number of Pins :
- 9
- Drain-source On Resistance-Max :
- 0.052Ohm
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- CSD25202W15

P-Channel Tape & Reel (TR) 26m Ω @ 2A, 4.5V 1010pF @ 10V 7.5nC @ 4.5V 20V 9-UFBGA, DSBGA
CSD25202W15 Description
This 21 m, 20 V device is designed to provide the lowest on resistance and gate charge in a compact 1.5 mm 1.5 mm chip scale package with outstanding thermal characteristics and a low profile. The device's low resistance, tiny footprint, and low profile make it excellent for battery-powered, space-constrained applications.
CSD25202W15 Features
-
Low-Resistance
-
Small Footprint 1.5 mm × 1.5 mm
-
Gate ESD Protection –3 kV
-
Gate-Source Voltage Clamp
CSD25202W15 Applications
-
Battery Management
-
Battery Protection
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