CSD25201W15
- Mfr.Part #
- CSD25201W15
- Manufacturer
- Texas Instruments
- Package / Case
- 9-UFBGA, DSBGA
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 4A 9DSBGA
- Stock
- 4,084
- In Stock :
- 4,084
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Drain Current-Max (Abs) (ID) :
- 4A
- Vgs(th) (Max) @ Id :
- 1.1V @ 250μA
- Rise Time :
- 11ns
- Gate to Source Voltage (Vgs) :
- -6V
- Series :
- NexFET™
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 9
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- 4A
- Drain to Source Voltage (Vdss) :
- 20V
- Number of Pins :
- 9
- Turn On Delay Time :
- 9.5 ns
- Fall Time (Typ) :
- 38 ns
- Terminal Position :
- BOTTOM
- REACH SVHC :
- No SVHC
- Input Capacitance (Ciss) (Max) @ Vds :
- 510pF @ 10V
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 5.6nC @ 4.5V
- Current - Continuous Drain (Id) @ 25°C :
- 4A Ta
- Turn-Off Delay Time :
- 51 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminations :
- 9
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 40m Ω @ 2A, 4.5V
- Nominal Vgs :
- -700 mV
- Drain-source On Resistance-Max :
- 0.07Ohm
- Power Dissipation :
- 1.5W
- Terminal Form :
- Ball
- Mounting Type :
- Surface Mount
- FET Type :
- P-Channel
- Lead Free :
- Contains Lead
- Base Part Number :
- CSD25201
- Power Dissipation-Max :
- 1.5W Ta
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- -20V
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Qualification Status :
- Not Qualified
- Threshold Voltage :
- -700mV
- Package / Case :
- 9-UFBGA, DSBGA
- Datasheets
- CSD25201W15

P-Channel Tape & Reel (TR) 40m Ω @ 2A, 4.5V 510pF @ 10V 5.6nC @ 4.5V 20V 9-UFBGA, DSBGA
CSD25201W15 Description
CSD25201W15 is a -20v P-Channel NexFET? Power MOSFET. The transistor CSD25201W15 has been designed to deliver the lowest on-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on-resistance coupled with the small footprint and low profile make the CSD25201W15 ideal for battery-operated space-constrained applications.
CSD25201W15 Features
-
Low Resistance
-
Small Footprint 1.5-mm x 1.5-mm
-
Gate ESD Protection - 3kV
-
Pb Free
-
RoHS Compliant
-
Halogen Free
-
Gate-Source Voltage Clamp
CSD25201W15 Applications
-
Monitor
-
Electric vehicle systems: energy recovery
-
Computation
-
Communication
-
Battery Management
-
Battery Protection
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