CSD23381F4T
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- Mfr.Part #
- CSD23381F4T
- Manufacturer
- Texas Instruments
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- MOSFET P-CH 12V 2.3A 3PICOSTAR
- Stock
- 361,427
- In Stock ：
- 361,427
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 12V
- FET Type :
- P-Channel
- Fall Time (Typ) :
- 7 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Threshold Voltage :
- -950mV
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Form :
- NO LEAD
- Vgs(th) (Max) @ Id :
- 1.2V @ 250µA
- Base Part Number :
- CSD23381
- Number of Terminations :
- 3
- Factory Lead Time :
- 6 Weeks
- Gate to Source Voltage (Vgs) :
- -8V
- Mount :
- Surface Mount
- Additional Feature :
- ULTRA LOW RESISTANCE
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Packaging :
- Tape and Reel (TR)
- Number of Channels :
- 1
- Lead Free :
- Lead Free
- Height :
- 350μm
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Width :
- 635μm
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- -12V
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- 3-XFDFN
- Power Dissipation-Max :
- 500mW Ta
- Turn-Off Delay Time :
- 18 ns
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 236pF @ 6V
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- BOTTOM
- Series :
- FemtoFET™
- Current - Continuous Drain (Id) @ 25°C :
- 2.3A Ta
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 1.14nC @ 6V
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 175m Ω @ 500mA, 4.5V
- Length :
- 1.035mm
- REACH SVHC :
- No SVHC
- Turn On Delay Time :
- 4.5 ns
- Continuous Drain Current (ID) :
- 2.3A
- Rise Time :
- 3.9ns
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Datasheets
- CSD23381F4T
P-Channel Tape & Reel (TR) 175m Ω @ 500mA, 4.5V 236pF @ 6V 1.14nC @ 6V 12V 3-XFDFN
CSD23381F4T Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 236pF @ 6V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 2.3A amps.In this device, the drain-source breakdown voltage is -12V and VGS=-12V, so the drain-source breakdown voltage is -12V in this case.It is [18 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 4.5 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is -8V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is -950mV.To operate this transistor, you will need a 12V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (1.8V 4.5V).
CSD23381F4T Features
a continuous drain current (ID) of 2.3A
a drain-to-source breakdown voltage of -12V voltage
the turn-off delay time is 18 ns
a threshold voltage of -950mV
a 12V drain to source voltage (Vdss)
CSD23381F4T Applications
There are a lot of Texas Instruments
CSD23381F4T applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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