CSD23280F3

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Case Connection :

DRAIN

Power Dissipation-Max :

500mW Ta

Terminal Position :

BOTTOM

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

116m Ω @ 400mA, 4.5V

Mount :

Surface Mount

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Feedback Cap-Max (Crss) :

11.1 pF

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Drain to Source Voltage (Vdss) :

12V

Pulsed Drain Current-Max (IDM) :

11.4A

Length :

690μm

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

1.8A Ta

Input Capacitance (Ciss) (Max) @ Vds :

234pF @ 6V

Mounting Type :

Surface Mount

Number of Elements :

1

Thickness :

345μm

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

DS Breakdown Voltage-Min :

12V

Pbfree Code :

yes

Factory Lead Time :

6 Weeks

Drain-source On Resistance-Max :

0.25Ohm

FET Type :

P-Channel

Continuous Drain Current (ID) :

1.8A

Series :

FemtoFET™

Base Part Number :

CSD23280

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Package / Case :

3-SMD, No Lead

Vgs(th) (Max) @ Id :

0.95V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

1.23nC @ 4.5V

Vgs (Max) :

-6V

Width :

600μm