CSD23202W10T
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- Mfr.Part #
- CSD23202W10T
- Manufacturer
- Texas Instruments
- Package / Case
- 4-UFBGA, DSBGA
- Datasheet
- Download
- Description
- MOSFET P-CH 12V 2.2A 4DSBGA
- Stock
- 508,595
- In Stock ：
- 508,595
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 9 ns
- Package / Case :
- 4-UFBGA, DSBGA
- Thickness :
- 650μm
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 512pF @ 6V
- Gate Charge (Qg) (Max) @ Vgs :
- 3.8nC @ 4.5V
- JESD-609 Code :
- e1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 53m Ω @ 500mA, 4.5V
- Current - Continuous Drain (Id) @ 25°C :
- 2.2A Ta
- Drain to Source Voltage (Vdss) :
- 12V
- Lead Free :
- Lead Free
- Length :
- 0m
- Series :
- NexFET™
- Continuous Drain Current (ID) :
- 2.2A
- Height :
- 625μm
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Fall Time (Typ) :
- 21 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Number of Channels :
- 1
- Base Part Number :
- CSD23202
- Feedback Cap-Max (Crss) :
- 37 pF
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- Threshold Voltage :
- -600mV
- Factory Lead Time :
- 6 Weeks
- Vgs(th) (Max) @ Id :
- 900mV @ 250μA
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- -6V
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- -12V
- Terminal Position :
- BOTTOM
- Width :
- 0m
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.5V 4.5V
- FET Type :
- P-Channel
- Terminal Form :
- Ball
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 4
- Number of Pins :
- 4
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Operating Mode :
- ENHANCEMENT MODE
- REACH SVHC :
- No SVHC
- Power Dissipation-Max :
- 1W Ta
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- Rise Time :
- 4ns
- Turn-Off Delay Time :
- 58 ns
- Mounting Type :
- Surface Mount
- Datasheets
- CSD23202W10T
P-Channel Tape & Reel (TR) 53m Ω @ 500mA, 4.5V 512pF @ 6V 3.8nC @ 4.5V 12V 4-UFBGA, DSBGA
CSD23202W10T Overview
The maximum input capacitance of this device is 512pF @ 6V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 2.2A.When VGS=-12V, and ID flows to VDS at -12VVDS, the drain-source breakdown voltage is -12V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 58 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 9 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is -600mV volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 12V in order to operate.Using drive voltage (1.5V 4.5V), this device helps reduce its power consumption.
CSD23202W10T Features
a continuous drain current (ID) of 2.2A
a drain-to-source breakdown voltage of -12V voltage
the turn-off delay time is 58 ns
a threshold voltage of -600mV
a 12V drain to source voltage (Vdss)
CSD23202W10T Applications
There are a lot of Texas Instruments
CSD23202W10T applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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