CSD22205LT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

600mW Ta

Current - Continuous Drain (Id) @ 25°C :

7.4A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

NO LEAD

DS Breakdown Voltage-Min :

8V

Drain to Source Voltage (Vdss) :

8V

Rds On (Max) @ Id, Vgs :

9.9m Ω @ 1A, 4.5V

Vgs (Max) :

-6V

Number of Pins :

4

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

NexFET™

Transistor Element Material :

SILICON

FET Type :

P-Channel

Terminal Position :

BOTTOM

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

71A

Transistor Application :

SWITCHING

Base Part Number :

CSD22205

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

1390pF @ 4V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Number of Terminations :

4

Length :

1.16mm

Vgs(th) (Max) @ Id :

1.05V @ 250μA

Factory Lead Time :

16 Weeks

Pbfree Code :

yes

Width :

1.16mm

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

8.5nC @ 4.5V

Package / Case :

4-XFLGA

Operating Mode :

ENHANCEMENT MODE

Thickness :

330μm

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

RoHS Status :

ROHS3 Compliant

Feedback Cap-Max (Crss) :

250 pF

Number of Elements :

1