CSD22202W15
- Mfr.Part #
- CSD22202W15
- Manufacturer
- Texas Instruments
- Package / Case
- 9-UFBGA, DSBGA
- Datasheet
- Download
- Description
- MOSFET P-CH 8V 10A 9DSBGA
- Stock
- 2,770
- In Stock :
- 2,770
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 8.4nC @ 4.5V
- Rise Time :
- 8.4ns
- Operating Mode :
- ENHANCEMENT MODE
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Drain to Source Breakdown Voltage :
- 8V
- Turn-Off Delay Time :
- 109 ns
- Series :
- NexFET™
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Ball
- Input Capacitance (Ciss) (Max) @ Vds :
- 1390pF @ 4V
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Feedback Cap-Max (Crss) :
- 250 pF
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 10A Ta
- Factory Lead Time :
- 16 Weeks
- Length :
- 1.75mm
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 1.5W Ta
- Number of Pins :
- 9
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Turn On Delay Time :
- 10.4 ns
- JESD-609 Code :
- e1
- Rds On (Max) @ Id, Vgs :
- 12.2m Ω @ 2A, 4.5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 625μm
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Fall Time (Typ) :
- 38 ns
- Vgs(th) (Max) @ Id :
- 1.1V @ 250μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Number of Elements :
- 1
- Pulsed Drain Current-Max (IDM) :
- 48A
- Continuous Drain Current (ID) :
- 10A
- Contact Plating :
- Copper, Silver, Tin
- Power Dissipation :
- 1.5W
- Gate to Source Voltage (Vgs) :
- -6V
- Element Configuration :
- Single
- FET Type :
- P-Channel
- Base Part Number :
- CSD22202
- Pbfree Code :
- yes
- Terminal Position :
- BOTTOM
- Width :
- 1.75mm
- Package / Case :
- 9-UFBGA, DSBGA
- Number of Terminations :
- 9
- Datasheets
- CSD22202W15

P-Channel Tape & Reel (TR) 12.2m Ω @ 2A, 4.5V 1390pF @ 4V 8.4nC @ 4.5V 9-UFBGA, DSBGA
CSD22202W15 Description
CSD22202W15 is a -8V P channel NexFET? power MOSFET. The CSD22202W15 is designed to deliver the lowest on-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on-resistance coupled with the small footprint and low profile make the CSD22202W15 ideal for battery-operated space-constrained applications.
CSD22202W15 Features
-
Low Resistance
-
Small Footprint 1.5 mm × 1.5 mm
-
Pb Free
-
Gate ESD Protection
-
RoHS Compliant
-
Halogen Free
-
Gate-Source Voltage Clamp
CSD22202W15 Applications
-
Battery Management
-
Battery Protection
-
Load Switch Applications
-
Electric vehicle systems
-
Computation
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