BZB84-C75215

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Reference Standard :

AEC-Q101; IEC-60134

JESD-609 Code :

e3

Published :

2009

ESD Protection :

No

HTS Code :

8541.10.00.50

Test Current :

2mA

Packaging :

Tape and Reel (TR)

Zener Voltage :

75V

Impedance :

255Ohm

Number of Terminations :

3

JEDEC-95 Code :

TO-236AB

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-236-3, SC-59, SOT-23-3

Tolerance :

±5%

Voltage - Forward (Vf) (Max) @ If :

900mV @ 10mA

Impedance-Max :

255Ohm

Diode Element Material :

SILICON

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-G3

Configuration :

1 Pair Common Anode

Polarity :

Unidirectional

Terminal Position :

Dual

Max Operating Temperature :

150°C

Max Power Dissipation :

300mW

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Factory Lead Time :

4 Weeks

Mounting Type :

Surface Mount

Voltage Tol-Max :

5%

Reference Voltage :

75V

Pin Count :

3

Diode Type :

ZENER DIODE

Mount :

Surface Mount

Max Reverse Leakage Current :

50nA

Element Configuration :

Common Anode

Terminal Form :

Gull wing

Contact Plating :

Tin

Current - Reverse Leakage @ Vr :

50nA @ 52.5V

ECCN Code :

EAR99