BZB84-B30,215

Manufacturer :

NXP Semiconductors

Product Category :

Diodes - Zener - Arrays

Number of Terminations :

3

Voltage Tol-Max :

2%

Current - Reverse Leakage @ Vr :

50nA @ 21V

Contact Plating :

Tin

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Voltage Tolerance :

2%

Reference Voltage :

30V

Max Reverse Leakage Current :

50nA

Impedance-Max :

80Ohm

Diode Element Material :

SILICON

JESD-30 Code :

R-PDSO-G3

Reference Standard :

AEC-Q101; IEC-60134

Min Operating Temperature :

-55°C

ECCN Code :

EAR99

Power Dissipation :

300mW

ESD Protection :

No

Package / Case :

TO-236-3, SC-59, SOT-23-3

Max Operating Temperature :

150°C

Tolerance :

±2%

Max Power Dissipation :

300mW

JEDEC-95 Code :

TO-236AB

Factory Lead Time :

4 Weeks

Configuration :

1 Pair Common Anode

Zener Current :

200mA

JESD-609 Code :

e3

Polarity :

Unidirectional

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Terminal Position :

Dual

Voltage - Forward (Vf) (Max) @ If :

900mV @ 10mA

Time@Peak Reflow Temperature-Max (s) :

30

Diode Type :

ZENER DIODE

Pin Count :

3

Published :

2009

Impedance :

80Ohm

Mounting Type :

Surface Mount

Element Configuration :

Common Anode

HTS Code :

8541.10.00.50

Mount :

Surface Mount

Zener Voltage :

30V

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Test Current :

2mA