BVSS123LT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Lifecycle Status :

ACTIVE (Last Updated: 11 hours ago)

Turn-Off Delay Time :

40 ns

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-236-3, SC-59, SOT-23-3

Vgs(th) (Max) @ Id :

2.8V @ 1mA

Current - Continuous Drain (Id) @ 25°C :

170mA Ta

Transistor Element Material :

SILICON

JESD-609 Code :

e3

ECCN Code :

EAR99

Halogen Free :

Halogen Free

Vgs (Max) :

±20V

Number of Elements :

1

Published :

2001

Rds On (Max) @ Id, Vgs :

6 Ω @ 100mA, 10V

Mounting Type :

Surface Mount

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

yes

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

170mA

Number of Pins :

3

Transistor Application :

SWITCHING

FET Type :

N-Channel

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

20pF @ 25V

Drain-source On Resistance-Max :

6Ohm

Drain to Source Voltage (Vdss) :

100V

Terminal Position :

Dual

Terminal Form :

Gull wing

Factory Lead Time :

4 Weeks

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

225mW

Turn On Delay Time :

20 ns

Power Dissipation-Max :

225mW Ta

Lead Free :

Lead Free

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V