BUZ80A

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

320 mJ

Vgs(th) (Max) @ Id :

4V @ 1mA

Packaging :

Tube

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

3 Ω @ 2A, 10V

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

3.6A Tc

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

800V

Series :

SIPMOS®

Continuous Drain Current (ID) :

3.6A

Drain to Source Voltage (Vdss) :

800V

JESD-609 Code :

e0

Terminal Finish :

Tin/Lead (Sn/Pb)

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

12A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

RoHS Status :

Non-RoHS Compliant

Power Dissipation-Max :

100W Tc

Reach Compliance Code :

Unknown

Qualification Status :

Not Qualified

JEDEC-95 Code :

TO-220AB

Configuration :

Single

Drain-source On Resistance-Max :

3Ohm

Drain Current-Max (Abs) (ID) :

3A

Mount :

Through Hole

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 25V

Package / Case :

TO-220-3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

JESD-30 Code :

R-PSFM-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single