BUX10
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- Mfr.Part #
- BUX10
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 125V 25A TO3
- Stock
- 19,981
- In Stock ：
- 19,981
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- REACH SVHC :
- No SVHC
- Case Connection :
- COLLECTOR
- Pbfree Code :
- yes
- Max Collector Current :
- 25A
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 7V
- Collector Base Voltage (VCBO) :
- 160V
- Transition Frequency :
- 8MHz
- JESD-30 Code :
- O-MBFM-P2
- Voltage - Rated DC :
- 125V
- Collector Emitter Breakdown Voltage :
- 125V
- Frequency :
- 8MHz
- Current - Collector Cutoff (Max) :
- 1.5mA
- Height :
- 8.7mm
- hFE Min :
- 20
- Length :
- 39.5mm
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 700mV
- Number of Pins :
- 3
- Package / Case :
- TO-204AA, TO-3
- Mount :
- Chassis Mount, Through Hole
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Power Dissipation :
- 150W
- Pin Count :
- 2
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 2
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 125V
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 2A, 20A
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Current Rating :
- 25A
- Max Power Dissipation :
- 150W
- Gain Bandwidth Product :
- 8MHz
- Mounting Type :
- Chassis Mount
- Operating Temperature :
- 200°C TJ
- Terminal Form :
- PIN/PEG
- Terminal Position :
- BOTTOM
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 10A 2V
- Terminal Finish :
- Tin (Sn)
- Base Part Number :
- BUX10
- Width :
- 26.2mm
- Datasheets
- BUX10
NPN 200°C TJ 1.5mA 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tube Chassis Mount
BUX10 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 10A 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 700mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.2V @ 2A, 20A.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is 25A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 8MHz.Single BJT transistor is possible to have a collector current as low as 25A volts at Single BJT transistors maximum.
BUX10 Features
the DC current gain for this device is 20 @ 10A 2V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 1.2V @ 2A, 20A
the emitter base voltage is kept at 7V
the current rating of this device is 25A
a transition frequency of 8MHz
BUX10 Applications
There are a lot of STMicroelectronics
BUX10 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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