BUX10
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- Mfr.Part #
- BUX10
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 125V 25A TO3
- Stock
- 1,475
- In Stock ：
- 1,475
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 8.7mm
- Collector Emitter Breakdown Voltage :
- 125V
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Mount :
- Chassis Mount, Through Hole
- Voltage - Rated DC :
- 125V
- Width :
- 26.2mm
- Current - Collector Cutoff (Max) :
- 1.5mA
- Power Dissipation :
- 150W
- Length :
- 39.5mm
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- Transition Frequency :
- 8MHz
- Gain Bandwidth Product :
- 8MHz
- ECCN Code :
- EAR99
- Frequency :
- 8MHz
- Collector Emitter Saturation Voltage :
- 700mV
- Max Power Dissipation :
- 150W
- Transistor Application :
- SWITCHING
- Terminal Form :
- PIN/PEG
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 2A, 20A
- Packaging :
- Tube
- Current Rating :
- 25A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 10A 2V
- Base Part Number :
- BUX10
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-204AA, TO-3
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Terminal Position :
- BOTTOM
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 2
- REACH SVHC :
- No SVHC
- Emitter Base Voltage (VEBO) :
- 7V
- Number of Elements :
- 1
- hFE Min :
- 20
- Number of Terminations :
- 2
- JESD-30 Code :
- O-MBFM-P2
- Collector Emitter Voltage (VCEO) :
- 125V
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Chassis Mount
- Operating Temperature :
- 200°C TJ
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 160V
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- Terminal Finish :
- Tin (Sn)
- Max Collector Current :
- 25A
- Datasheets
- BUX10
NPN 200°C TJ 1.5mA 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tube Chassis Mount
BUX10 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 10A 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 700mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.2V @ 2A, 20A.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is 25A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 8MHz.Single BJT transistor is possible to have a collector current as low as 25A volts at Single BJT transistors maximum.
BUX10 Features
the DC current gain for this device is 20 @ 10A 2V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 1.2V @ 2A, 20A
the emitter base voltage is kept at 7V
the current rating of this device is 25A
a transition frequency of 8MHz
BUX10 Applications
There are a lot of STMicroelectronics
BUX10 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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