BULB742C-1

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Mfr.Part #
BULB742C-1
Manufacturer
STMicroelectronics
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Datasheet
Download
Description
TRANS NPN 400V 4A I2PAK
Stock
1,000
In Stock :
1,000

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Packaging :
Tube
Power - Max :
70W
JESD-609 Code :
e3
Transistor Type :
NPN
Package / Case :
TO-262-3 Long Leads, I2Pak, TO-262AA
Base Part Number :
BULB742
Element Configuration :
Single
Pbfree Code :
yes
Number of Elements :
1
Pin Count :
3
Polarity/Channel Type :
NPN
Transistor Element Material :
SILICON
Collector Emitter Breakdown Voltage :
400V
Radiation Hardening :
No
Mount :
Through Hole
Max Power Dissipation :
70W
Emitter Base Voltage (VEBO) :
15V
Mounting Type :
Through Hole
Current - Collector Cutoff (Max) :
250μA
Collector Emitter Voltage (VCEO) :
400V
Transistor Application :
SWITCHING
Operating Temperature :
150°C TJ
Number of Terminations :
3
Terminal Finish :
Tin (Sn)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 1A, 3.5A
Case Connection :
COLLECTOR
Number of Pins :
3
RoHS Status :
ROHS3 Compliant
Max Collector Current :
4A
DC Current Gain (hFE) (Min) @ Ic, Vce :
25 @ 800mA 3V
Datasheets
BULB742C-1
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BULB742C-1 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-262-3 Long Leads, I2Pak, TO-262AA, Base Part Number:BULB742, Mounting Type:Through Hole, Operating Temperature:150°C TJ, Number of Terminations:3, Number of Pins:3, BULB742C-1 pinout, BULB742C-1 datasheet PDF, BULB742C-1 amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BULB742C-1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics BULB742C-1


NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-262-3 Long Leads, I2Pak, TO-262AA Tube Through Hole

BULB742C-1 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 25 @ 800mA 3V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 15V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 4A volts.

BULB742C-1 Features


the DC current gain for this device is 25 @ 800mA 3V
the vce saturation(Max) is 1.5V @ 1A, 3.5A
the emitter base voltage is kept at 15V


BULB742C-1 Applications


There are a lot of STMicroelectronics
BULB742C-1 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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